Next-Generation of Electronics Will Include an Interconnect Insulator
Researchers at Samsung and UNIST in collaboration with Graphene Flagship develop ultrathin boron nitride films for new electronics.
| Sep 25, 2020 12:38 PM EST
Created: Sep 25, 2020 12:38 PM EST
a -BN sample grown on a Si substrate at T= 673K. Atomic species are shown in different colors: Si (yellow), Blue (N), Pink 3 (B)UNIST, SAIT, University of Cambridge, Catalan Institute of Nanoscience and Nanotechnology