Paragraf has perfected a proprietary process for depositing single-atom thick, two-dimensional materials, including graphene, directly onto silicon, silicon-carbide, sapphire, gallium-nitride, and other semiconductor-compatible substrates. The contamination-free technology is scalable, and compatible with existing electronic device manufacturing processes.
Serving the sensor, energy harvesting and semiconductor markets, Paragraf has developed its own Hall-Effect Sensors for measuring magnetic fields in demanding environments. It is now partnering with electronic device makers to enable them to take advantage of the unique properties of graphene.
Paragraf is looking for a Growth Scientist/Engineer with thin film growth experience to join them!